Mechanism for Current Saturation and Energy Dissipation in Graphene Transistors
نویسندگان
چکیده
منابع مشابه
Energy dissipation in graphene field-effect transistors.
We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 kW cm(-2) of dissipated electric power. The metallic contacts act as heat sinks, but not in a dominant fashion. To explain the observed temperature profile and he...
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We present a study of transport in graphene devices on polar insulating substrates by solving the Boltzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of the saturated velocity shows very weak dependence on the carrier density, the nature of the insulating substrate, and the low-field mobility, varied by the ch...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2010
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.104.236601